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<h1>Indium phosphide, InP</h1>

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, belonging to the III-V group of semiconductors. It offers a high electron mobility and a direct bandgap, making it especially useful for optoelectronic devices that operate in the infrared and visible spectra. InP is widely used as a substrate material for epitaxial growth of other III-V semiconductors, such as GaAs and InGaAs, and is essential for constructing high-speed transistors and photonic integrated circuits. The material is often grown using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). InP is particularly important in the fabrication of high-performance light-emitting diodes (LEDs), laser diodes, and waveguide-based photonic components. It's also a key material for fiber-optic communication systems. Handling InP requires caution due to the toxicity of its constituent elements.

<h2>Other name</h2>
<ul>
<li>Indium(III) phosphide</li>
</ul>

<h2>External links</h2>
<ul>
<li><a href="https://en.wikipedia.org/wiki/Indium(III)_phosphide">Indium(III) phosphide - Wikipedia</a></li>
<li><a href="http://www.ioffe.ru/SVA/NSM/Semicond/InP">Indium phosphide - NSM Archive</a></li>
</ul>
